2SK1010 transistor equivalent, n-channel mosfet transistor.
*Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT.
*Drain Current
–ID=6A@ TC=25℃
*Drain Source Voltage-
: VDSS= 500V(Min)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high voltage, high speed power switc.
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